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Materials Research Society (Fall Meeting 2018) UnsolvedMysteries of Halide Perovskites Prof. Aron Walsh Imperial College London, UK Yonsei University, Korea Materials Design Group: https://wmd-group.github.io @lonepair From @KamatlabND

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Halide Perovskites – What we Know Introduction to underlying physics in 2014 MRS talk: https://speakerdeck.com/aronwalsh ABX3 compounds with strong optical absorption, light carrier masses, efficient dielectric screening Device consequences • Weak exciton binding (EB

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Semiconductors with a Twist Current-voltage hysteresis Snaith et al, JPCL (2014); Unger et al, EES (2014) Rapid chemical conversion between halides Pellet et al, CoM (2015); Eperon et al, MH (2015) Photoinduced phase separation Hoke et al, CS (2015); Yoon et al, ACS-EL (2016) Electric-field induced phase separation Xiao et al, NatM (2015); Yuan et al, AEM (2016) Photo-stimulated ionic conductivity Yang et al, AChemie (2015); Kim et al, NatM (2018)

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Semiconductors with a Twist Mixed ionic-electronic charge transport Ionic Conduction of the Perovskite-Type Halides Ionic Conductivity of CsPbCl3 and CsPbBr3 Large Photoeffect on Ion Conduction in Perovskites

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Semiconductors with a Twist Nature Comm. 6, 8497 (2015); ACS Energy Lett. 3, 1983 (2018) Reservoir of charged point defects in thermodynamic equilibrium, e.g. V- MA , V2- Pb , V+ I A. Walsh et al, Angew. Chemie 54, 1791 (2015) Figure 3. Iodide ion vacancy migration from DFT calculations (a) Calculated migration Vacancy Ea (eV) I- 0.6 CH3 NH3 + 0.8 Pb2+ 2.3 D ~ 10-12cm2s-1 at T = 300 K [PBEsol/DFT in 768 atom supercell with nudged-elastic band] Bulk diffusion barrier

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Mysteries of Perovskites A. Charge Carrier Localisation B. Spontaneous Lattice Strain C. Defects and Doping

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Nature of Electron and Hole Carriers Charge carriers in crystals are quasi-particles defined by electron-lattice interaction: polarons Effective mass (Bohr) radius

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Nature of Electron and Hole Carriers Charge carriers in crystals are quasi-particles defined by electron-lattice interaction: polarons Polaron radius

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Nature of Electron and Hole Carriers Fröhlich electron-lattice interaction ! = 1 2 1 %& − 1 %( ) ℏ+ 2,+ ℏ - . GaAs = 0.1 CdTe = 0.3 CH3 NH3 PbI3 = 2.4 SrTiO3 = 3.8 Intermediate coupling regime: Large polaron Variational solution for Feynman polaron model rP = 4 unit cells mP * = 0.2 me (+30%) µP < 100 cm2V-1s-1 Jarvist Frost APL Materials 2, 081506 (2014); ACS Energy Lett. 2, 2647 (2017)

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Real-Space Hot Polaron Cooling Excess excitation energy contained in polaron, with slow exchange to the bulk crystal Frost, Whalley, Walsh, ACS Energy Letters 2, 2647 (2017) Low Density n < 1018 cm-3 High Density n > 1018 cm-3 (Laser source) Notebooks: https://github.com/WMD- group/hot-carrier-cooling

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Ultra-Low Thermal Conductivity Phonon-phonon interactions 103 stronger (shorter lifetimes) in CH3 NH3 PbI3 than GaAs Whalley et al, PRB 94, 220301(R) (2016); Gold-Parker et al, PNAS, Online (2018) Calculated lattice thermal conductivity (Phono3py; PBEsol) T = 300K GaAs (!) 38 (calculated) 45 (measured) MAPI (!) 0.05 (calculated) ~0.5 (measured)

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Open Question: Rashba Polarons Does symmetry breaking (non-centrosymmetry) alter the physics of polarons in perovskites? CH3 NH3 PbI3 CsPbI3 QSGW+SOC calculations on ab initio MD trajectory QUESTAAL Code With Mark van Schilfgaarde McKechnie et al, Phys. Rev. B 98, 085108 (2018) Rashba-Dresselhaus splitting of valence & conduction bands (300 K) ↑ ↓

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Open Question: Rashba Polarons Sensitive to material form and quality? Carrier concentrations? Length and time scale of measurements? Does symmetry breaking (non-centrosymmetry) alter the physics of polarons in perovskites?

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Mysteries of Perovskites A. Charge Carrier Localisation B. Spontaneous Lattice Strain C. Defects and Doping

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“Ferroelectric” Pb Halide Perovskites Paper titles from the literature on one material!

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“Ferroelectric” Pb Halide Perovskites Paper titles from the literature on one material! Many reports misled by polarisation signatures of interface charging, ion transport and/or lattice strain

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Ferroelastic Domain Formation [Image] Nat. Comm. 8, 14547 (2017); J. Phys. Chem. C 120, 5724 (2016) Twin domains in CH3 NH3 PbI3 as a result of cubic- to-tetragonal phase transition around 57℃ Cubic (70℃) Tetragonal (25℃ ) 1µm 1µm (110) domains (TEM, SAED) Reversible with T Δa/a~0.3% Domains form to minimise stress

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Ferroelastic Domain Formation “Twinning in ferroelectric and ferroelastic ceramics: stress relief” G. Arlt, J. Mater. Sci. 25, 2655 (1990) Same features observed in BaTiO3 – domains vary with grain size and shape distribution; sensitive to electron beam intensity in halide perovskites BaTiO3 CH3 NH3 PbI3

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Scales of Disorder in Perovskites Lattice strain patterns have a complex heterogeneity across multiple length scales “Supergrain” <110> quiver plot Nanofocus XRD at ESRF Micro-XRD at ALS Over 20 µm: 0.3% strain [Led by Sam Stranks] T. Jones et al, arXiv 1803.01192 (2018)

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Open Question: (Photo)Electrostriction New perspective on ferroic effects: J. N. Wilson et al, arXiv 1811.01832 (2018) No convincing explanation or model for what drives lattice expansion up to Δa/a = 1% Reversible changes with timescales of ms to hours, suggests defect formation and redistribution

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Mysteries of Perovskites A. Charge Carrier Localisation B. Spontaneous Lattice Strain C. Defects and Doping

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Point Defects in Photovoltaic Materials Good Bad Population of Charge Carriers Shallow donors and acceptors Limit Charge Carrier Mobility Ionised and neutral impurity scattering Non-radiative e-h Recombination Deep level defects Coupled ion & electron transport, defect aggregates, and redox reactions Ugly Defect Tolerance: A. Walsh and A. Zunger, Nature Materials 16, 965 (2017)

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Many Defects but Few Carriers Lead halide perovskites are intrinsic – low carrier concentrations, resistant to extrinsic p or n doping Carrier Conc. Technique Reference 109 cm-3 Hall effect on pressed pellets of CH3 NH3 PbI3 Stoumpos et al, Inorg Chem 52, 9019 (2013) 109 cm-3 Impedance measurements on photovoltaic devices Pockett et al, J Phys Chem C 119, 3456 (2015) 1014 cm-3 Hall effect on thin films of CH3 NH3 PbI3 Bu et al, J Mat Chem A 2, 18508 (2014) 1014 cm-3 = 1 carrier every 10 million unit cells (high purity CdTe)

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Iodine Vacancy: High Concentration Low formation energy of VI + implies a high equilibrium donor concentration n = N exp −ΔGDefect k B T ⎛ ⎝ ⎜ ⎞ ⎠ ⎟ Defect concentration 0.2 eV (VI + for EF = midgap) Lattice sites in MAPI If this was the sole defect: n = 1019 cm-3 Calculations by groups of Y. Yan (2014), M.-H. Du (2014), D.O. Scanlon (2015)…

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Electronic (Carrier) Compensation If the only defect present is VI + then a high electron concentration would be expected Concentration of ionised donors Concentration of conduction electrons Charge neutrality expression

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Charge compensation by ionic defects determine the doping limits of most semiconductors Ionic (Defect) Compensation Defect self-compensation: G. Mandel, Phys. Rev. 134, A1073 (1963) Decades of literature: Kröger, Walukiewicz, Wei, Zunger; van de Walle, Catlow Recent review: Walsh and Zunger, Nature Materials 16, 965 (2017) Electronic regime Ionic regime Overall charge neutrality Donors Holes Acceptors Electrons

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Self-Regulation of Charge A. Walsh et al, Angewandte Chemie 54, 1791 (2015) A high population of charged defects with overall charge neutrality – few excess electrons or holes Schottky disorder Frenkel disorder Two limits Both forms of stoichiometric disorder – common in oxide perovskites

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High concentration of charged defects from equilibrium thermodynamics ≥ 1018 cm-3 Perovskites: Soup of Charged Defects + + + + - - - - - ++ ++ - - - Quantitative predictions difficult as beyond dilute defect limit and description of solution processing / precipitation reactions

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Open Question: Deep Defects Non-radiative recombination rates are low, but still represent loss of 100–200 mV from ideal Ji-sang Park et al, Nature Reviews Materials 3, 195 (2018) Technique Trap Levels (eV) DLTS (Yang, Science 2017) 0.46, 0.78, 0.82 below conduction band TSC (Baumann, JPCL 2015) 0.5 from a band edge DLTS (Heo, EES 2017) 0.62, 0.75 below conduction band Sensitive to growth but ≲ 1015 cm-3 traps

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Open Question: Deep Defects 2X# + h& → X( # V centre X# + X) # + h& → X( # H centre Whalley, Crespo-Otero, and Walsh, ACS Energy Letters 2, 2713 (2017) Halide redox: Hole trapping in V and H centres studied in metal halides since the 1950s Predicted excited-states TDDFT (PBE0 with SOC) in DALTON2016 On-going work: Carrier trapping rates by Lucy Whalley (ICL)

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Group Talks at #f18mrs Lone Pair Engineering for Polar Semiconductors Me again! Today 11:15 - EP01.01.09 Effect of Stacking Disorder in Cu2 ZnSn(S,Se)4 Jisang Park, Wed 08:45 - ET11.09.02 Charge Separation in Organic Solar Cells Samantha Hood, Wed 14:15 - EP05.10.03 Extended Defects in Earth Abundant Inorganic Materials Jisang Park, Wed 14:15 - ET12.06.03 Origin of Green-Light Emission in Cs4 PbBr6 Youngkwang Jung, Friday 8:30 AM - ET05.13.03

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Conclusion and Outlook We learned a lot about halide perovskites since 2012. Challenges remain for understanding structural & electronic properties, e.g. will there ever be a perovskite p-n homojunction? Project Collaborators: Lucy Whalley, Jarvist Frost, Jonathan Skelton, Jacob Wilson, Youngkwang Jung; Mark van Schilfgaarde (Kings); Keith Butler (ISIS); Sam Stranks (Cambridge); Chol-Jun Yu (Kim Il Sung) Piers Barnes (ICL); Mike Toney (SLAC) Slides: https://speakerdeck.com/aronwalsh