Slides for my talk on vacancy-ordered halide perovskites as high entropy semiconductors (theoretical modelling and experiments) at MRS Spring 2024, Seattle.
YouTube video recording: https://youtu.be/lLFkX7mW1r4
References:
Ultra-Strong Excitons in Vacancy-Ordered Halide Perovskites: https://doi.org/10.1021/acs.jpclett.2c02436
Mixed-Cation Vacancy-Ordered Halide Perovskites: https://pubs.acs.org/doi/10.1021/acs.jpcc.3c05204
Questions welcome! For other computational photovoltaics, defects and disorder talks, have a look at my YouTube channel!
https://www.youtube.com/SeanRKavanagh
For other research articles see:
https://bit.ly/3pBMxOG
Abstract:
Due to their quasi-0D / molecular-aggregate type crystal structure, vacancy-ordered double perovskites (VODPs) with the chemical formula A2BX6, exhibit unusual material properties associated with both zero-dimensional and three-dimensional materials.1–4 These include low thermal conductivity, high compressibility, and strong exciton binding despite relatively small semiconducting band gaps, making them potential candidates for a range of alternative applications, such as thermoelectrics, white-light emitters/phosphors, photocatalysts, non-linear optics and more. In this study, we report a combined experimental and computational investigation on the mixing behavior of cations in this system. Remarkably, we find ultra-low enthalpic costs to cation mixing, resulting in entropy dominance and ideal mixing behavior. This facilitates the room-temperature and low-temperature synthesis of high-entropy materials (high-entropy semiconductors) from these compounds, as demonstrated experimentally by Folgueras et al in Nature, 2023.5 We elucidate the underlying structural and electronic origins of this facile cation miscibility in these systems, and analyze the resulting optical, thermodynamic and structural changes upon cation mixing. Our work demonstrates that vacancy-ordered perovskites present an exciting new class of high-entropy semiconductors, synthesisable at much milder conditions than typical high-entropy materials. Moreover, we elucidate the origins of this behavior, allowing the extraction of general design rules for high-entropy semiconductors with tailored properties.